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MOSFET\(Q\)ãONã®æãé»æµçµè·¯ã¯ãå ¥åé»å§\(V_{IN}\)âMOSFET\(Q\)âã³ã€ã«\(L\)ããšãªããŸãããã®æéã§ã¯ãåºåã³ã³ãã³ãµ\(C_{OUT}\)ã«å é»ãããŠããé»è·ãè² è·æµæ\(R_{OUT}\)ã«æŸé»ãããŠããŸãã
ã³ã€ã«\(L\)ã¯é»æµã®å€åã劚ããããã«åäœãããããMOSFET\(Q\)ãONããŠããé»æµã¯äžæ°ã«ã¯æµãããã³ã€ã«\(L\)ã«æµããé»æµ\(i_L\)ã¯åŸã ã«å¢å ããŸãã
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ã€ã³ãã¯ã¿ã³ã¹\(L{\mathrm{[H]}}\)ã®ã³ã€ã«ã«æµããŠããé»æµã\(I{\mathrm{[A]}}\)ã®æãã³ã€ã«ã«èããããŠãããšãã«ã®ãŒ\(U{\mathrm{[J]}}\)ã¯æ¬¡åŒã§è¡šãããŸãã
\begin{eqnarray}
U=\frac{1}{2}LI^2{\mathrm{[J]}}
\end{eqnarray}
ã³ã€ã«ã®ãšãã«ã®ãŒ\(U{\mathrm{[J]}}\)ã«ã€ããŠã¯å¥éäžèšã®èšäºã§è©³ãã説æããŠããŸãã®ã§ããåèã«ããŠãã ããã
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MOSFET\(Q\)ãOFFã«ãªããšãã³ã€ã«\(L\)ã«èããããŠãããšãã«ã®ãŒãæŸåºããŠãã³ã€ã«\(L\)ã¯é»æµãæµãç¶ããããšããŸãã
ãã®ããããã®æéã®é»æµçµè·¯ã¯ãã³ã€ã«\(L\)âåºåéš(åºåã³ã³ãã³ãµ\(C_{OUT}\)ïŒè² è·æµæ\(R_{OUT}\))âãã€ãªãŒã\(D\)ããšãªããŸãããã®æéã§ã¯ãåºåã³ã³ãã³ãµ\(C_{OUT}\)ãå é»ãããšåæã«ãè² è·æµæ\(R_{OUT}\)ã«ãé»æµãæµããŠããŸãã
ã³ã€ã«\(L\)ã¯é»æµã®å€åã劚ããããã«åäœãããããã³ã€ã«\(L\)ã«æµããé»æµ\(i_L\)ã¯åŸã ã«æžå°ããŸãã
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V_{OUT}=\frac{-D}{1-D}V_{IN}\tag{1}
\end{eqnarray}
äžåŒã«ãããŠããªã³ãã¥ãŒãã£æ¯\(D\)ã¯MOSFET\(Q\)ã®1åšæ\(T\)ã«ããããªã³æé\(T_{ON}\)ã®å²åãªã®ã§ã次åŒã§è¡šãããŸãã
\begin{eqnarray}
D=\frac{T_{ON}}{T}=\frac{T_{ON}}{T_{ON}+T_{OFF}}=T_{ON}Ãf_{SW}\tag{2}
\end{eqnarray}
(2)åŒã«ãããŠã\(f_{SW}\)ã¯MOSFET\(Q\)ã®ã¹ã€ããã³ã°åšæ³¢æ°ã§ãã(2)åŒããåããããã«ããªã³ãã¥ãŒãã£æ¯\(D\)ã¯1ããå°ããå€ãšãªããŸãã
ãŸãããªã³ãã¥ãŒãã£æ¯\(D\)ã0ïœ1ã«å€åãããæã®\(\left|\displaystyle\frac{V_{OUT}}{V_{IN}}\right|\)ã®ã°ã©ããäžå³ã«ç€ºããŠããŸãã
ãªã³ãã¥ãŒãã£æ¯\(D\)ã0.5ãã倧ããæã¯\(\left|\displaystyle\frac{V_{OUT}}{V_{IN}}\right|\)ã1ãã倧ãã(\(|V_{OUT}|{>}|V_{IN}|\))ããªã³ãã¥ãŒãã£æ¯\(D\)ã0.5ããå°ããæã¯\(\left|\displaystyle\frac{V_{OUT}}{V_{IN}}\right|\)ã1ããå°ãã(\(|V_{OUT}|{<}|V_{IN}|\))ãªããããæéå§ã§ããããšãåŒããåãããŸãã
äŸãã°ããªã³ãã¥ãŒãã£æ¯\(D\)ã0.8ã®å Žåãš0.2ã®å Žåãåºåé»å§\(V_{OUT}\)ã¯æ¬¡åŒã§è¡šãããŸãã
\begin{eqnarray}
V_{OUT}&=&\frac{-D}{1-D}V_{IN}=\frac{-0.8}{1-0.8}V_{IN}=-4V_{IN}\tag{3}\\
\\
V_{OUT}&=&\frac{-D}{1-D}V_{IN}=\frac{-0.2}{1-0.2}V_{IN}=-\frac{1}{4}V_{IN}\tag{4}
\end{eqnarray}
äžåŒããåããããã«ãåºåé»å§\(V_{OUT}\)ã®åŒã«ãã€ãã¹ãã€ããŸããããªãã¡ãæéå§ã³ã³ããŒã¿ã¯æéå§ã§ããŸããããå ¥åãšåºåãå転ããããšããç¹åŸŽãããã®ã§æ³šæããŠãã ããã
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æéå§ã³ã³ããŒã¿ãLTspiceã§ã·ãã¥ã¬ãŒã·ã§ã³ããæã®çµæãäžå³ã«ç€ºããŠããŸãã
äžå³ã®å³åŽã«ç€ºããŠãã波圢ã¯äžãã
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- åºåé»å§\(V_{OUT}\)
- ã¹ã€ãã\(S\)ã®é§åä¿¡å·\(v_{GS}\)
- ã³ã€ã«\(L\)ã«æµããé»æµ\(i_L\)
- ã¹ã€ãã\(S\)ã«æµããé»æµ\(i_S\)
- ãã€ãªãŒã\(D\)ã«æµããé»æµ\(i_D\)
ãšãªã£ãŠããŸãã
MOSFET\(Q\)ããã€ãªãŒã\(D\)ã®æ倱ãç¡èŠããããã«ãã·ãã¥ã¬ãŒã·ã§ã³åè·¯ã§ã¯MOSFET\(Q\)ã¯çæ³ã¹ã€ããããã€ãªãŒã\(D\)ã¯çæ³ãã€ãªãŒããçšããŠããŸãã
ãŸããå ¥åé»å§\(V_{IN}\)ã¯5Vãçæ³ã¹ã€ãã\(S\)ã®ãªã³ãã¥ãŒãã£æ¯\(D\)ã¯0.8ã«ããŠããŸãããã®ãããåºåé»å§\(V_{OUT}\)ã¯(1)åŒãã
\begin{eqnarray}
V_{OUT}&=&\frac{-D}{1-D}V_{IN}=\frac{-0.8}{1-0.8}Ã5=-20{\mathrm{[V]}}
\end{eqnarray}
ãšãªããŸããã·ãã¥ã¬ãŒã·ã§ã³çµæã§ããåºåé»å§\(V_{OUT}\)ã-20Vãšãªããæå§åäœãããŠããããšã確èªã§ããŸãã
次ã«ããªã³ãã¥ãŒãã£æ¯\(D\)ã0.5ããå°ããããæã«ãéå§åäœãããŠãããã確èªããŠã¿ãŸããããçæ³ã¹ã€ãã\(S\)ã®ãªã³ãã¥ãŒãã£æ¯\(D\)ã0.2ã«ããæã®ã·ãã¥ã¬ãŒã·ã§ã³çµæãäžå³ã«ç€ºããŠããŸãããã®å Žåãåºåé»å§\(V_{OUT}\)ã¯(1)åŒãã
\begin{eqnarray}
V_{OUT}&=&\frac{-D}{1-D}V_{IN}=\frac{-0.2}{1-0.2}Ã5=-1.25{\mathrm{[V]}}
\end{eqnarray}
ãšãªããŸããã·ãã¥ã¬ãŒã·ã§ã³çµæã§ããåºåé»å§\(V_{OUT}\)ã-1.25Vãšãªããéå§åäœãããŠããããšã確èªã§ããŸãã
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